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We explore the pattern of linear and first nonlinear optical (NLO) response of repulsive
impurity doped quantum dots harmonically confined in two dimensions. The dopant impurity
potential chosen assumes Gaussian form. The quantum dot is subject to a static electric field. For
some fixed values of transverse magnetic field strength (

The study of impurity states in low-dimensional heterostructures has emerged as an important aspect to which many theoretical and experimental works have been dedicated. As a result, nowadays the researches on doped semiconductor devices come out to be ubiquitous [

Miniaturization of semiconductor devices reaches the bottom of the avenue with the advent of so-called low-dimensional structures such as quantum dots (QDs), with QD’s new perspectives and delicacies in the field of impurity doping emerge, due to the mingling of new confinement sources with impurity related potentials [

For quite sometimes, search for molecules and materials with high linear and nonlinear susceptibilities and ultrafast response time has been pursued all over the world [

In the present manuscript, we inspect the diagonal components of linear (

We consider the energy eigenstates of an electron subject to a harmonic confinement potential

We write the trial wave function

In presence of a static electric field of strength

The model Hamiltonian (cf. (

We have made some attempt to reasonably connect our theoretical parameters to the real life-doped QD. The parameter

The width of the impurity domain in nm for different

0.00001 | 14.07 |

0.0001 | 4.45 |

0.001 | 1.41 |

0.01 | 0.44 |

0.1 | 0.14 |

Figure

Plots of

We now investigate the diagonal components of first hyperpolarizability (

Plots of

We have now varied

Plots of

A similar saturation behavior is also envisaged in

Plots of

We now turn our attention towards inspecting the influence of spatial stretch of impurity (

Plots of

Plots of

The diagonal components of linear and first nonlinear polarizabilities of repulsive impurity doped quantum dots subject to a static electric field reveal intriguing features. For an in-depth analysis, we examine the roles played by impurity spread, impurity strength and most importantly impurity location meticulously on these components. We have found that the linear polarizability components decrease with increase in separation of dopant location from that of dot confinement center and also with an increase in spatial shrinkage of dopant potential. On the other hand, we envisage an increase in the said components with impurity strength. However, in all cases finally some steady behavior has been observed and

At the fag end of the discussion, it appears to be quite significant to highlight the new findings in the present investigation in the light of the results of [

In the present investigation, we did not consider the influence of size on the optical properties. Although in principle the dot wave function can stretch up to infinity but in practice, it actually terminates at some finite values. Thus, the size effect would be important at length scales within the actual termination of wave function.

It is quite expected that donor and acceptor impurity would exhibit distinct impacts on the NLO properties. Recently, Hazra et al. have investigated the role of donor and acceptor impurities in a slightly different context. It needs further study to precisely understand the distinct roles of acceptor and donor impurity pertinent to the present investigation.

The authors N. K. Datta and M. Ghosh thank D. S. T.-F. I. S. T (Government of India) and U. G. C.-S. A. P (Government of India) for financial support.

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