Advances in Materials Science and Engineering
Volume 2016 (2016), Article ID 9387651, 7 pages
http://dx.doi.org/10.1155/2016/9387651

Research Article

Influence of Deposition Condition on Y₂O₃ Coatings Produced by Pulsed Electrophoretic Deposition

Hidetoshi Miyazaki,¹ Asumi Ichikawa,¹ Hisao Suzuki,² and Toshitaka Ota³

¹Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504, Japan
²Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
³Ceramic Research Laboratory, Nagoya Institute of Technology, 10-6-29 Asahigaoka, Tajimi, Gifu 507-0071, Japan

Received 13 January 2016; Revised 4 April 2016; Accepted 13 April 2016

Academic Editor: Meilin Liu

Copyright © 2016 Hidetoshi Miyazaki et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract.

Y₂O₃ nanoparticle suspension aqueous solution was prepared using citric acid. Then, Y₂O₃ film was deposited using this solution with pulsed electrophoretic deposition (EPD). A dense Y₂O₃ film of 25.7 μm thickness was obtained with deposition conditions of 0.5 wt% Y₂O₃ concentration, bias voltage of 0.5 V, and bias frequency of 1 kHz. The respective resistivities of the as-deposited film and films heat-treated at 200°C and 400°C were 2.84 × 10³ Ω·cm, 5.36 × 10⁴ Ω·cm, and 2.05 × 10⁶ Ω·cm. A 59.8 μm thick dense Y₂O₃ film was obtained using two-step deposition with change of the bias voltage: a first step of 0.5 V and a second step of 2.0 V.

1. Introduction

Recently, semiconductor production equipment systems for dry etching have become widely used [1]. Carbon fluoride gas plasma is commonly used for high-speed etching of silicon wafers [2]. During production in equipment chambers, these plasmas invariably contact ceramic walls made of materials such as SiO₂ or Al₂O₃, thereby causing erosion of the equipment and producing contamination particles [3]. High plasma resistance is therefore necessary for the etching chamber. As a new component of dry-etching equipment, Y₂O₃ is an anticipated candidate because of its excellent resistance to plasma corrosion [4].

Substrate materials of semiconductor production equipment system components are commonly aluminum-based alloys or stainless steel. In fact, Y₂O₃ coatings are applied onto these substrates [5] using coating methods that include CVD [6], plasma spray [7], and aerosol deposition [4]. These coating techniques require vacuum systems, which are expensive resources that entail great difficulty for coating large substrates. However, the substrate materials described above show high electrical conductivity. Electrophoretic deposition (EPD), one candidate for use as Y₂O₃ coating method, enables coatings to be obtained on both planar and complex shape substrates such as spheres and bending metal parts [8]. Furthermore, films can be formed using “powders” alone. Therefore, its limitations are few for source materials. For those reasons, some EPD methods are quite suitable for Y₂O₃ coating onto alloy components of semiconductor production equipment.

In this investigation, Y₂O₃ coating was investigated using Y₂O₃ suspension aqueous solution with a pulsed EPD method. The use of AC or pulsed bias induces very little decomposition of water. Therefore, gas bubble formation in the deposits is eliminated or is greatly minimized [9]. Using a pulsed EPD method to form Y₂O₃ coatings in this investigation, we observed the effects of deposition conditions on Y₂O₃ film formation.

2. Experimental Procedure

As a starting material, Y₂O₃ (Nanophase Technologies Corp., USA) powder was used. It had particle size of 20–90 nm. Y₂O₃ powder was put into a 1.0 wt% citric acid (Wako Pure Chemical Inds. Ltd., Osaka, Japan) aqueous solution with the Y₂O₃ weight ratio of 0.5–5 wt%. Citric acid was used to stabilize the Y₂O₃ suspension aqueous solution [10]. The resulting Y₂O₃ suspension solution was subjected to ultrasonic waves. The suspension solution was stirred. Stainless steel was used as the substrate. It was soaked in the suspension. Y₂O₃ deposition on this substrate was conducted by application of a pulsed bias to substrates using a universal source (HP-3245A; Agilent Technologies Inc.). The bias voltage applied to substrates was −0.5 to −5.0 V (hereinafter, we call a negative bias value simply an absolute bias value). The bias frequency was 10–100 kHz. Deposition was conducted for 1 h. The deposited films were dried at 70°C for 1 day.

The grain size and form of the Y₂O₃ particles were evaluated using transmission electron microscopy (TEM, EM-002B; Topcon Corp.). The microstructures of the resulting powders were observed using a scanning electron microscope (SEM, JSM-6510; JEOL). Resistivity of the resulting films was evaluated along with the deposition direction using a two-probe method with a DC source (HP-3654; Hewlett Packard Co.) and a digital voltmeter (HP34401; Hewlett Packard Co.).

3. Results and Discussion

The Y₂O₃ particle microstructure was observed using TEM, as presented in Figure 1. The Y₂O₃ particle grain size was 20–90 nm. The form was spheroidal. The Y₂O₃ coatings were applied with different conditions of concentration (wt%) of suspension solution, frequency of applied bias voltage, and the applied bias voltage using Y₂O₃ particles.

Figure 1: TEM image of the precursor Y₂O₃ nanoparticles.

Figures 2 and 3 present surface and cross-sectional SEM images of films deposited under various Y₂O₃ concentrations of a suspension solution (0.5, 2.0, and 5.0 wt%). The dashed circles in the figures indicate the pores or cracks. The coating was conducted under bias voltage of 0.5 V and bias frequency of 1 kHz. The mean thicknesses of films with Y₂O₃ concentrations of 0.5, 2.0, and 5.0 wt% were, respectively, 25.7 μm, 23.4 μm, and 23.0 μm. Increasing the Y₂O₃ concentration in a solution decreased the film thickness slightly, but the film thickness did not depend much on the Y₂O₃ concentration in the solution. The film produced using a 0.5 wt% solution was dense with pores that were free from the cross-sectional image (Figure 3(a)). A few particles were adsorbed onto the film surface (Figure 2(a)). Increasing the Y₂O₃ concentration in the solution increased the adsorbing particles of various sizes including large sizes on the film surface (Figures 2(b) and 2(c)) and an increase in small pores in the films (Figures 3(b) and 3(c)). These large particles were assumed to be the aggregated Y₂O₃ particles. Aggregation of Y₂O₃ particles occurred in a high Y₂O₃ concentration solution. Many large particles were adsorbed onto the growing films’ surface at deposition. Presumably, the adsorption of large particles at the growing film surface did not form a dense film because homogeneous Y₂O₃ film growth was prevented by the existence of the adsorbed large particles. Consequently, dense Y₂O₃ films with a few adsorptions were obtained using a low Y₂O₃ concentration solution. The optimal concentration in this study was found to be 0.5 wt%.

(a)

(b)

(c)

Figure 2: Surface SEM images of the films deposited at various Y₂O₃ concentrations in a suspension solution (0.5, 2.0, and 5.0 wt%), with bias voltage of 0.5 V and bias frequency of 1 kHz.

(a)

(b)

(c)

Figure 3: Cross-sectional SEM images of films deposited at various Y₂O₃ concentrations in a suspension solution (0.5, 2.0, and 5.0 wt%), with bias voltage of 0.5 V and bias frequency of 1 kHz.

To confirm the effects of bias frequency, Y₂O₃ films were deposited to the substrates with different bias frequencies. Figures 4 and 5 show surface and cross-sectional SEM images of the films deposited using various bias frequencies (10 Hz, 1 kHz, and 100 kHz). The dashed circles in the figures indicate the pores or cracks. The coating was conducted with bias voltage of 0.5 V and the Y₂O₃ concentration of 0.5 wt% in a suspension solution. For ease of comparison of the SEM images, an SEM image of the film under bias voltage of 0.5 V is shown in Figures 4(b) and 5(b). The mean thicknesses of the films with bias frequencies of 10 Hz, 1 kHz, and 100 kHz were 36.9 μm, 25.7 μm, and 41.0 μm, respectively. The film thickness depended slightly on the bias frequency. For a film deposited with the bias frequency of 10 Hz, many particles were observed on the film surface (Figure 4(a)). Small pores and voids were observed in the film (Figure 5(a)). Furthermore, gas bubbles were generated during film deposition with the bias frequency of 10 Hz because of electrolysis. This electrolysis phenomenon caused some damage (pores and voids) to the resulting film. Both films with bias frequencies of 1 kHz and 100 kHz were dense with pores free from cross-sectional images (Figures 5(b) and 5(c)). A few particles were adsorbed onto the film surface (Figures 4(b) and 4(c)). No great differences between films with bias frequencies of 1 kHz and 100 kHz were observed. A low bias frequency prohibited formation of a dense film, although a high bias frequency (higher than 1 kHz in this investigation) causes formation of a dense film with few adsorptions.

(a)

(b)

(c)

Figure 4: Surface SEM images of films deposited at various bias frequencies (10 Hz, 1 kHz, and 100 kHz), with bias voltage of 0.5 V and Y₂O₃ concentration of 0.5 wt% in a suspension solution.

(a)

(b)

(c)

Figure 5: Cross-sectional SEM images of films deposited at various bias frequencies (10 Hz, 1 kHz, and 100 kHz), with bias voltage of 0.5 V and Y₂O₃ concentration of 0.5 wt% in a suspension solution.

To confirm the effects of bias voltage, Y₂O₃ films were deposited onto the substrates with different bias voltages. The Y₂O₃ concentration and the bias frequency were fixed, respectively, as 0.5 wt% and 1 kHz. Figures 6 and 7 present surface and the cross-sectional SEM images of films deposited at various bias voltages: 0.5, 2.0, and 5 V. To compare the SEM images easily, the SEM image of the film under the condition of 0.5 V is depicted again as in Figures 6(a) and 7(a). The dashed circles in the figures indicate the pores or cracks. The mean thicknesses of the films with bias voltages of 0.5, 2.0, and 5 V were, respectively, 25.7 μm, 35.5 μm, and 35.1 μm. The film thickness increased slightly with increased bias voltage. Increasing the bias voltage caused an increase of particle absorbance onto the film surface (Figures 6(a)–6(c)) and an increase of small pores in the films (Figures 7(a)–7(c)). The greater the bias voltage applied to the substrate at deposition, the more the particles in the suspension solution moved to the substrate electrophoretically. Presumably, the adsorption of large particles at the growing film surface does not cause the formation of a dense film because homogeneous Y₂O₃ film growth was prevented by the existence of the large particles that had been adsorbed. Furthermore, these adsorptions presumably caused generation of many pores when growing films at higher bias voltages. Thereby, low bias voltage was shown to be suitable for Y₂O₃ film deposition using a pulsed EPD method.

(a)

(b)

(c)

Figure 6: Surface SEM images of the films deposited at various bias voltages (0.5, 2.0, and 5 V), with bias frequency of 1 kHz and the Y₂O₃ concentration of 0.5 wt% in a suspension solution.

(a)

(b)

(c)

Figure 7: Cross-sectional SEM images of films deposited at various bias voltages (0.5, 2.0, and 5 V), with bias frequency of 1 kHz and the Y₂O₃ concentration of 0.5 wt% in a suspension solution.

Results showed that Y₂O₃ dense films were obtainable under the deposition conditions: low Y₂O₃ concentration (0.5 wt%), high bias frequency (higher than 1 kHz), and low bias voltage (0.5 V). We attempted deposition with a longer deposition time (longer than 1 h), but the film thickness did not correspond to the condition described above. In general, the resistivity of Y₂O₃ is 10¹⁴ Ω·cm [11]. When the film thickness was large, the film resistance was high. The effective electrical field of the film surface decreased with increasing film thickness because of the increased film resistance. The present study showed a limitation of Y₂O₃ film thickness that exists when using the pulsed EPD method with constant bias voltage.

To evaluate the electric insulation of the resulting Y₂O₃ film, the resistivity was measured for an as-deposited film. Furthermore, the resistivity of a film that was heat-treated at 200°C and 400°C was measured. The resistivity of the as-deposited film and the films heat-treated at 200°C and 400°C was, respectively, 2.84 × 10³ Ω·cm, 5.36 × 10⁴ Ω·cm, and 2.05 × 10⁶ Ω·cm. Although the resistivity of the as-deposited film was lower than the reported value of 1 × 10¹⁴ Ω·cm [11], the as-deposited film showed sufficient electrical insulation, which suggests that some limitation of Y₂O₃ film thickness exists in relation to pulsed EPD method because of the film’s high resistivity. The resistivity of the film that had been heat-treated at 200°C increased corresponding to that of the as-deposited film. This result is assumed to be attributable to residual water removed from films by heat treatment at 200°C. The resistivity of the film that was heat-treated at 400°C increased more than that of the film heat-treated at 200°C, presumably because of the removal of residual citric acid in the films. The resistivity of the film that had been heat-treated at 400°C was 2.05 × 10⁶ Ω·cm, which was much less than the reported value of 1 × 10¹⁴ Ω·cm. The resulting films require some other heat or vacuum treatment to obtain pure Y₂O₃ films.

A dense Y₂O₃ film with film thickness of 25.7 μm was obtained using pulsed EPD method under deposition conditions of Y₂O₃ concentration of 0.5 wt%, bias frequency of 1 kHz, bias voltage of 0.5 V, and deposition time of 1 h, but a thicker Y₂O₃ film is necessary for application to semiconductor production equipment. Therefore, we attempted fabrication of a dense, thick film using two-step deposition with different bias voltages. The first step was deposition with conditions of 0.5 wt% Y₂O₃ concentration, bias voltage of 0.5 V, bias frequency of 1 kHz, and 1-hour deposition. The second step was increased bias voltage (2.0 V). Other deposition conditions were identical to those of the first deposition. Figure 8 presents SEM images of the films deposited with the second-step bias of 2.0 V. The film thickness produced with the second-step bias of 2.0 V was about 59.8 μm. A borderline between the first-step deposition and the second-step deposition was observed at around 30.3 μm from the substrate. This result suggests that Y₂O₃ dense and thick film can be deposited using two-step deposition with changing of the bias voltage. To obtain a dense, thick film using pulsed EPD, two or more deposition steps with different bias voltages are very useful.

Figure 8: Cross-sectional SEM images of the films with two-step depositions. The first-step deposition condition was 0.5 wt% Y₂O₃ concentration, with bias voltage of 0.5 V, bias frequency of 1 kHz, and deposition time of 1 h. The second-step deposition condition was 0.5 wt% Y₂O₃ concentration, with bias voltage of “2.0 V,” bias frequency of 1 kHz, and deposition time of 1 h.

4. Conclusion

Using pulsed EPD, Y₂O₃ films were deposited. To obtain a dense Y₂O₃ film using that method, the effective deposition conditions were found to be the following: low Y₂O₃ concentration solution, high bias frequency, and low bias voltage. Increasing the Y₂O₃ concentration in a solution slightly decreased the film thickness. The resulting Y₂O₃ films contain water and some organics derived from the Y₂O₃ suspension solution. Heat treatment was necessary to remove the residual water and organics from the resulting Y₂O₃ films. Results show that Y₂O₃ dense film thickness can be controlled through deposition while changing the bias voltage in two or more steps.

Competing Interests

The authors declare that they have no competing interests.

References

C. D. W. Wilkinson, L. Deng, and M. Rahman, “Issues in etching compound and Si-based devices,” Japanese Journal of Applied Physics, vol. 41, no. 6, pp. 4261–4266, 2002.

R. Doering and Y. Nishi, Handbook of Semiconductor Manufacturing Technology, CRC Press, New York, NY, USA, 2008.

D.-M. Kim, K.-B. Kim, S.-Y. Yoon, Y.-S. Oh, H.-T. Kim, and S.-M. Lee, “Effects of artificial pores and purity on the erosion behaviors of polycrystalline Al₂O₃ ceramics under fluorine plasma,” Journal of the Ceramic Society of Japan, vol. 117, no. 1368, pp. 863–867, 2009.

J. Iwasawa, R. Nishimizu, M. Tokita, M. Kiyohara, and K. Uematsu, “Plasma-resistant dense yttrium oxide film prepared by aerosol deposition process,” Journal of the American Ceramic Society, vol. 90, pp. 2327–2332, 2007.

Tocalo, “Plasma-resistant dense yttrium oxide film prepared by aerosol deposition process,” The Journal of the Vacuum Society of Japan, vol. 52, pp. 648–651, 2009.

Y. Akiyama, “Modeling thermal CVD,” Journal of Chemical Engineering of Japan, vol. 35, no. 8, pp. 701–713, 2002.

Japan Ceratec, AIST, Jpn. Patent, 321183A, 2007

K. Kanamura and J.-I. Hamagami, “Innovation of novel functional material processing technique by using electrophoretic deposition process,” Solid State Ionics, vol. 172, no. 1–4, pp. 303–308, 2004.

B. Neirinck, J. Fransaer, O. Van der Biest, and J. Vleugels, “Aqueous electrophoretic deposition in asymmetric AC electric fields (AC–EPD),” Electrochemistry Communications, vol. 11, no. 1, pp. 57–60, 2009.

J. He, X.-D. Li, J.-G. Li, and X.-D. Sun, “Colloidal stability of aqueous suspensions of nano-yttria powders,” International Journal of Materials Science and Engineering, vol. 1, no. 1, pp. 28–31, 2013.

C. K. Campbell, “Some dielectric properties of electron-beam evaporated yttrium oxide thin films,” Thin Solid Films, vol. 6, no. 3, pp. 197–202, 1970.