An electrical conduction versus temperature model using a Hall device was developed. In the case of InAs, InGaAs, and GaAs MBE epilayers, the prediction agrees well with the experimental results. Herein, we explain here how these calculated fractions of total conductivity describe the measured values. The method allows for the calculation of the carrier concentration and mobility of each component of a multicarrier system. The extracted concentrations are used to characterise the different components of charge transport in the active layer. The conductance values
We take as an example a physical two-layer model according of thin InAs MBE layers. After etching step by step Grange et al. [
This result is in agreement with the TEM image presented in Figure a strongly defected layer measuring a correctly formed layer measuring
Two-layer pattern of MBE InAs layer after Fawcett et al. [
Charge carrier concentration versus thickness of
We present in Figure
Therefore one can convince one’s self that the two-layer model may be practically used in our calculation.
Electron and hole concentrations are derived by the numerical solution of the neutrality equation:
To obtain the mobility, we numerically integrate the equation
Scattering mechanisms used in calculations.
Semiconductor |
Scattering on ionized donors and acceptors | Scattering on acoustic phonons (deformation potential) | Scattering on acoustic phonons (piezoelectric potential) | Scattering on optics polar phonons | Scattering on space charge | Scattering on dislocations |
---|---|---|---|---|---|---|
InAs |
|
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|
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| ||||||
In0.53Ga0.47As |
|
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| ||||||
GaAs |
|
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|
Structural inaccuracy, especially in layered structures, is one factor that affects how the magnitude of a magnetic field influences measured charge transport properties [ The Hall voltage of the investigated semiconductor is not proportionally dependent on the magnetic field. Such behaviour in the conductivity process results in charge carriers (electrons and holes) with different mobilities. The mentioned authors [
In cases in which this concept is applicable, the calculations are supported by the conductivity tensor dependence on the magnetic field [
Equation (
Our approach accounts for several sources of charge carriers as components contribution to the total conductivity of a semiconductor layer [
Main properties of the investigated semiconductors at 300 K.
Investigated semiconductor | Energy gap [eV] | Intrinsic concentration [cm−3] | Average distance between impurities |
Donor state Bohr radius |
|
Donor state ionisation energy |
---|---|---|---|---|---|---|
InAs | 0.354 | ~1 · 1015 | 384.5 | 367 | 1.05 | 1.36 |
In0.53Ga0.47As | 0.743 | 8.5 · 1011 | 1224.6 | 180 | 6.8 | 2.8 |
GaAs | 1.43 | 2.2 · 106 | 809.5 | 104 | 7.8 | 5.25 |
Concentration versus temperature
The procedure for epitaxial layers of InAs is described as an example. The layers were obtained by molecular beam epitaxy (MBE) in a Riber 32P reactor on GaAs (001) substrates. The preparation conditions are presented in Table
Growth conditions of InAs layers on (001) GaAs substrates.
No. of procedures | Thickness [ |
Relation between V/III | Substrate temperature [°C] |
---|---|---|---|
92 | 4 | 5 | 440 |
298 | 5.6 | 4.5 | 450 |
301 | 4.7 | 3.7 | 500 |
330 | 9.05 | 5.8 | 506 |
Scattering mechanism involved in calculation of InAs samples properties.
No. | Parameter | InAs 330 |
InAs 301 |
InAs 298 |
InAs 292 |
---|---|---|---|---|---|
1 | Mobility [cm2/V · s] |
|
|
|
|
The layers exhibited very smooth surfaces and good crystallographic quality (RHEED results) and electrical properties (Hall measurements). The electrical properties are measured “ numerical solution of the neutrality equation, numerical calculation of the mobility of each component of the neutrality equation versus temperature; after determining the values for concentration and mobility versus temperature, we could obtain the conductivity values.
To validate the accuracy of the calculation, we compared the resistivity versus temperature, that is, calculated the curve using experimental data as in Figure
The resistivity versus temperature semiconductor parameters as in Figure
We present a more detailed example of the calculation for an InAs sample measuring 9.0
Conductance components for InAs samples at temperatures 10 K and 70 K.
No. | Parameter | 10 K | 70 K | ||||
---|---|---|---|---|---|---|---|
InAs | InAs | InAs | InAs | InAs | InAs | ||
9 |
4.7 |
9 |
4.7 |
5.6 |
4 | ||
1 |
|
3.8 · 1015 | 7.9 · 1015 | 2.7 · 1015 | 6.62 · 1015 | 4.52 · 1016 | 4.085 · 1017 |
2 |
|
8000 | 3600 | 49000 | 33500 | 17350 | * |
3 |
|
4.9 | 4.56 | 21.17 | 35.53 | 125.63 | * |
4 |
|
1 | 1 | 1 | 1 | 1 | * |
5 |
|
1.7 · 1015 | 2.01 · 1015 | 5.03 · 1015 | 5.04 · 1015 | 1.495 · 1016 | 1.43 · 1016 |
6 |
|
7653 | 3320.15 | 49000 | 33153 | 23972.1 | * |
7 |
|
2.07 | 1.07 | 21.87 | 26.76 | 57.41 | * |
8 |
|
0.426 | 0.234 | 1.03 | 0.753 | 0.46 | * |
9 |
|
2.17 · 1015 | 5.94 · 1015 | −1.06 · 1014 | 5.64 · 1015 | 3.023 · 1016 | 3.94 · 1017 |
10 |
|
19465 | 2286 | −1914 | 7536.31 | 28202.4 | * |
11 |
|
6.76 | 2.175 | 0.033 | 6.81 | 136.58 | * |
12 |
|
1.4 | 0.48 | 0.0015 | 0.192 | 1.087 | * |
13 |
|
−4.63 · 1014 | −2.45 · 1014 | −2.13 · 1014 | −1.69 · 1014 | −8.66 · 1014 | * |
14 |
|
−100 | −472.22 | −2740 | −1623.56 | 28518.2 | * |
15 |
|
0.0074 | 0.0185 | 0.093 | 0.044 | −3.96 | * |
16 |
|
0.0015 | 0.00406 | 0.0044 | 0.0124 | 0.0315 | * |
17 |
|
3.407 · 1015 | 7.705 · 1015 | 4.7 · 1015 | 1.05 · 1016 | 4.43 · 1016 | 4.083 · 1017 |
18 |
|
4.41 · 10−3 | 2.14 · 10−3 | 1.9 · 10−2 | 1.67 · 10−2 | 7.03 · 10−2 | * |
19 |
|
1.86 · 10−3 | 5.03 · 10−4 | 1.97 · 10−2 | 1.26 · 10−2 | 3.2 · 10−2 | * |
20 |
|
6.0 · 10−3 | 1.02 · 10−3 | 2.97 · 10−5 | 3.2 · 10−3 | 7.65 · 10−2 | * |
21 |
|
6.66 · 10−6 | 8.7 · 10−6 | 8.37 · 10−5 | 2.068 · 10−5 | −2.2 · 10−3 | * |
22 |
|
7.87 · 10−3 | 1.53 · 10−3 | 1.98 · 10−2 | 1.58 · 10−2 | 10.63 · 10−2 | * |
23 |
|
1.78 | 0.71 | 1.042 | 0.95 | 1.5 | * |
Conductance components for InAs samples at 200 K.
No. | Parameter | 200 K | |||
---|---|---|---|---|---|
InAs | InAs | InAs | InAs | ||
9 |
4.7 |
5.6 |
4 | ||
1 |
|
3.28 · 1015 | 7.86 · 1015 | 4.68 · 1016 | 4.055 · 1017 |
2 |
|
24000 | 21900 | 16600 | 8700 |
3 |
|
12.6 | 27.576 | 124.46 | 564. |
4 |
|
1 | 1 | 1 | 1 |
5 |
|
4.0 · 1015 | 8.12 · 1015 | 3.41 · 1016 | 9.88 · 1016 |
6 |
|
23570 | 29849.3 | 17016.3 | 10221 |
7 |
|
15.65 | 27.12 | 92.96 | 162. |
8 |
|
1.24 | 0.983 | 0.75 | 0.286 |
9 |
|
−7.5 · 1014 | −2.49 · 1014 | 1.276 · 1016 | 3.07 · 1017 |
10 |
|
−4765 | −601.37 | 5692.03 | 31734 |
11 |
|
0.57 | 0.024 | 11.63 | 1559 |
12 |
|
0.045 | 0.00087 | 0.093 | 2.76 |
13 |
|
−9.0 · 1013 | 5.88 · 1014 | −1.54 · 1015 | * |
14 |
|
−621 | 1506.67 | 5758.1 | * |
15 |
|
0.009 | 0.142 | −1.42 | * |
16 |
|
0.0007 | 0.00515 | −0.0011 | * |
17 |
|
3.16 · 10−15 | 8.46 · 1015 | 4.5 · 1016 | 4.058 · 1017 |
18 |
|
1.134 · 10−2 | 1.3 · 10−2 | 6.97 · 10−2 | 22.56 · 10−2 |
19 |
|
1.41 · 10−2 | 1.27 · 10−2 | 5.2 · 10−2 | 6.48 · 10−2 |
20 |
|
5.13 · 10−4 | 1.13 · 10−5 | 6.5 · 10−3 | 62.36 · 10−2 |
21 |
|
8.1 · 10−6 | 6.67 · 10−5 | −7.95 · 10−4 | * |
22 | Σ |
1.45 · 10−2 | 1.28 · 10−2 | 5.77 · 10−2 | 68.84 · 10−2 |
23 |
|
1.28 | 0.98 | 0.83 | 3.05 |
Conductance components for InAs samples at 300 K.
No. | Parameter | 300 K | |||
---|---|---|---|---|---|
InAs | InAs | InAs | InAs | ||
9 |
4.7 |
5.6 |
4 | ||
1 |
|
4.18 · 1015 | 9.62 · 1015 | 4.97 · 1016 | 4.09 · 1017 |
2 |
|
16000 | 15800 | 14580 | 8400 |
3 |
|
10.7 | 24.35 | 116.08 | 550 |
4 |
|
1 | 1 | 1 | 1 |
5 |
|
5.62 · 1015 | 8.13 · 1015 | 4.27 · 1016 | 1.45 · 1017 |
6 |
|
16240 | 15611 | 14565.7 | 9090 |
7 |
|
14.6 | 20.33 | 99.64 | 211 |
8 |
|
1.36 | 0.835 | 0.858 | 0.38 |
9 |
|
−1.43 · 1015 | −7.56 · 1014 | 7.073 · 1015 | 2.64 · 1017 |
10 |
|
−4430 | −1109.67 | 2275.6 | 16535 |
11 |
|
1.01 | 0.134 | 2.58 | 698 |
12 |
|
0.095 | 0.0055 | 0.022 | 1.27 |
13 |
|
4.5 · 1014 | 1.862 · 1015 | −1.51 · 1015 | * |
14 |
|
1965 | 3636.22 | 2302.22 | * |
15 |
|
0.14 | 1.085 | −0.56 | * |
16 |
|
0.013 | 0.0445 | −0.048 | * |
17 |
|
4.64 · 1015 | 9.24 · 1015 | 4.83 · 1016 | 4.09 · 1017 |
18 |
|
9.63 · 10−3 | 1.145 · 10−2 | 6.5 · 10−2 | 22.0 · 10−2 |
19 |
|
1.314 · 10−2 | 9.55 · 10−3 | 5.58 · 10−2 | 8.44 · 10−2 |
20 |
|
9.09 · 10−4 | 6.3 · 10−5 | 1.44 · 10−3 | 27.92 · 10−2 |
21 |
|
1.26 · 10−4 | 5.1 · 10−4 | 3.14 · 10−4 | * |
22 |
|
1.417 · 10−2 | 1.012 · 10−2 | 5.75 · 10−2 | 36.36 · 10−2 |
23 |
|
1.47 | 0.88 | 0.88 | 1.65 |
Scattering mechanism involved in calculation of InGaAs samples properties.
No. | Parameter | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As |
---|---|---|---|---|---|
7 |
1.0 |
1.1 |
1.0 | ||
1 | Mobility [cm2/V · s] |
|
|
|
|
Mobility versus temperature calculated using the parameters presented in Figure
The ratio of electron concentration to density of states in the conduction band versus temperature for the structure shown in Figure
Mobility
The electron mobility
The hole mobility
The electron mobility
The
The
The
The
Figure
We also verified the ratio of
Conductance components for InGaAs samples at temperatures of 10 K and 70 K.
No. | Parameter | 10 K | 70 K | |||
---|---|---|---|---|---|---|
In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | ||
7 |
7 |
1.0 |
1.1 |
1.0 | ||
1 |
|
1 · 1013 | 1.2 · 1013 | 2.66 · 1015 | 1.095 · 1017 | 1.8 · 1019 |
2 |
|
6000 | 38000 | 48835 | 4086.1 | 1770.3 |
3 |
|
0.01 | 0.073 | 20.8 | 71.6 | 50.98 |
4 |
|
1 | 1 | 1 | 1 | 1 |
5 |
|
9.5 · 1013 | 1.5 · 1013 | 2.4 · 1015 | * | * |
6 |
|
815 | 37300 | 98000 | * | * |
7 |
|
0.0124 | 0.09 | 37.67 | * | * |
8 |
|
1.24 | 1.22 | 1.8 | * | * |
9 |
|
2.0 · 1012 | 0.0 | 4.92 · 1014 | * | * |
10 |
|
−730 | −7650 | −78000 | * | * |
11 |
|
−0.00023 | 0.0 | −6.15 | * | * |
12 |
|
−0.023 | * | −0.295 | * | * |
13 |
|
0.0 | 8 · 109 | 3.45 · 107 | * | * |
14 |
|
−720 | −6710 | −53100 | * | * |
15 |
|
* | −0.000009 | −2.93 · 10−7 | * | * |
16 |
|
* | 0.000123 | −1.41 · 10−8 | * | * |
17 |
|
9.7 · 1013 | 1.5 · 1013 | 2.892 · 1015 | * | * |
18 |
|
7 · 10−6 | 5.11 · 10−5 | 0.00208 | 7.88 · 10−3 | 5.098 · 10−3 |
19 |
|
8.68 · 10−6 | 6.3 · 10−5 | 0.0038 | * | * |
20 |
|
−1.61 · 10−7 | 0 | −6.15 · 10−4 | * | * |
21 |
|
* | * | * | * | * |
22 |
|
8.52 · 10−6 | 6.3 · 10−5 | 0.003185 | * | * |
23 |
|
1.22 | 1.235 | 1.53 | * | * |
The resistivity curves (conductivity parameters) show very satisfactory behaviour. The calculated curve approximately agrees with the experimental data at all temperatures with some discrepancies only at temperatures below 15 K. This disagreement is most marked below 100 K, when the concentration is near 10% of the number of states in the conduction band (Figure
The Hall mobility measurements (as in Figure
We now present the results of mobility calculations of each component obtained after solution of the neutrality equation (Figures
Conductance components for InGaAs samples at 200 K.
No. | Parameter | 200 K | |||
---|---|---|---|---|---|
In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | ||
7 |
1.0 |
1.1 |
1 | ||
1 |
|
4.0 · 1013 | 4.65 · 1015 | 1.04 · 1017 | 1.799 · 1019 |
2 |
|
19000 | 12810 | 8514 | 2010.5 |
3 |
|
0.122 | 9.54 | 141.85 | 5794 |
4 |
|
1 | 1 | 1 | 1 |
5 |
|
1.95 · 1014 | 8.0 · 1015 | 8.42 · 1016 | 1.2 · 1018 |
6 |
|
18370 | 14400 | 8842 | 3045 |
7 |
|
0.574 | 18.45 | 119.26 | 585 |
8 |
|
4.7 | 1.93 | 0.84 | 0.1 |
9 |
|
−1.85 · 1014 | −2.7 · 1015 | 2.53 · 1016 | 1.68 · 1019 |
10 |
|
−13400 | −6320 | 1643.3 | 35440 |
11 |
|
0.4 | 2.73 | 6.66 | 95381 |
12 |
|
3.28 | 0.29 | 0.047 | 16.46 |
13 |
|
3.6 · 1013 | 5.3 · 1013 | 1.38 · 1016 | * |
14 |
|
64870 | −1840 | −882 | * |
15 |
|
0.37 | −0.016 | −1.95 | * |
16 |
|
3.03 | −0.00164 | −0.014 | * |
17 |
|
4.6 · 1013 | 5.35 · 1015 | 1.233 · 1017 | 1.8 · 1019 |
18 |
|
8.54 · 10−5 | 9.54 · 10−4 | 1.56 · 10−2 | 57.94 · 10−2 |
19 |
|
4.02 · 10−4 | 1.845 · 10−3 | 1.31 · 10−2 | 5.85 · 10−2 |
20 |
|
2.8 · 10−4 | 2.73 · 10−4 | 7.33 · 10−4 | 9.538 |
21 |
|
2.59 · 10−4 | −1.6 · 10−6 | −2.145 · 10−4 | * |
22 |
|
9.41 · 10−4 | 2.12 · 10−3 | 1.36 · 10−2 | 9.59 |
23 |
|
11.02 | 2.22 | 0.872 | 16.55 |
Conductance components for InGaAs samples at 300 K.
No. | Parameter | 300 K | |||
---|---|---|---|---|---|
In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | In0.53Ga0.47As | ||
7 |
1.0 |
1.1 |
1.0 | ||
1 |
|
1.2 · 1014 | 6.75 · 1015 | 1.13 · 1017 | 1.796 · 1019 |
2 |
|
13000 | 8280 | 7310.5 | 1890 |
3 |
|
0.25 | 8.95 | 132.2 | 5431 |
4 |
|
1 | 1 | 1 | 1 |
5 |
|
1.6 · 1014 | 1.0 · 1016 | 9.76 · 1016 | 1.55 · 1018 |
6 |
|
12970 | 8400 | 7477 | 2970 |
7 |
|
0.33 | 13.4 | 116.8 | 732 |
8 |
|
1.32 | 1.5 | 0.88 | 0.13 |
9 |
|
−1.45 · 1014 | −3.32 · 1015 | 1.59 · 1016 | 1.64 · 1019 |
10 |
|
−6500 | −3230 | 875.6 | 25150 |
11 |
|
0.15 | 1.72 | 2.23 | 66076 |
12 |
|
0.6 | 0.19 | 0.017 | 12.17 |
13 |
|
1.2 · 1014 | 6.9 · 1014 | 1.72 · 1016 | * |
14 |
|
169360 | 25 | 443 | * |
15 |
|
3.25 | 0.00276 | 1.22 | * |
16 |
|
13.0 | 0.0003 | 0.0092 | * |
17 |
|
1.35 · 1014 | 7.37 · 1015 | 1.135 · 1017 | 1.795 · 1019 |
18 |
|
1.75 · 10−4 | 8.95 · 10−4 | 1.45 · 10−2 | 54.31 · 10−2 |
19 |
|
2.31 · 10−4 | 1.34 · 10−3 | 1.28 · 10−2 | 7.32 · 10−2 |
20 |
|
1.05 · 10−4 | 1.72 · 10−4 | 2.45 · 10−4 | 6.608 |
21 |
|
2.275 · 10−3 | 2.76 · 10−7 | 1.34 · 10−4 | * |
22 |
|
2.61 · 10−3 | 1.35 · 10−3 | 1.34 · 10−2 | 6.68 |
23 |
|
14.9 | 1.7 | 0.92 | 12.3 |
Scattering mechanism involved in calculation of GaAs samples properties.
No. | Parameter | GaAs |
GaAs |
GaAs |
GaAs |
---|---|---|---|---|---|
1 | Mobility [cm2/V · s] |
|
|
|
|
Conductance components in GaAs.
No. | Parameter | 10 K | 70 K | 300 K | ||||||
---|---|---|---|---|---|---|---|---|---|---|
GaAs | GaAs | GaAs | GaAs | GaAs | GaAs | GaAs | GaAs | GaAs | ||
1.7 |
4.25 |
1.7 |
2.6 |
2.4 |
4.25 |
1.7 |
2.6 |
2.4 | ||
1 |
|
1.72 · 1015 | 4.3 · 1014 | 1.71 · 1015 | 3.47 · 1015 | 4.8 · 1015 | 4.6 · 1014 | 1.84 · 1015 | 5.24 · 1015 | 9.5 · 1015 |
2 |
|
8000 | 62000 | 48200 | 20730 | 19940 | 6000 | 8000 | 4315.4 | 3117.9 |
3 |
|
2.2 | 4.27 | 13.5 | 11.52 | 15.33 | 0.45 | 2.36 | 3.62 | 4.74 |
4 |
|
1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
5 |
|
1.35 · 1015 | 4.71 · 1014 | 1.85 · 1015 | 3.43 · 1015 | 4.83 · 1015 | 4.87 · 1014 | 2.02 · 1015 | 5.23 · 1015 | 1.0 · 1016 |
6 |
|
7570 | 60793 | 48674 | 20730 | 19963 | 6141 | 7777 | 4323 | 3130 |
7 |
|
1.64 | 4.58 | 14.42 | 11.4 | 15.45 | 0.478 | 2.52 | 3.62 | 5.01 |
8 |
|
0.744 | 1.07 | 1.07 | 0.99 | 1.008 | 1.06 | 1.07 | 1. | 1.056 |
9 |
|
3.4 · 1014 | −4.31 · 1013 | −1.41 · 1014 | 3.57 · 1013 | −3.25 · 1013 | −2.53 · 1013 | −2.17 · 1014 | 1.2 · 1013 | −5.8 · 1014 |
10 |
|
1912 | −5273 | −3720 | 215.5 | −134.6 | −282.5 | −837.6 | 10 | −180 |
11 |
|
0.104 | 0.0364 | 0.084 | 0.00123 | 0.0007 | 0.00114 | 0.03 | 0.00002 | 0.017 |
12 |
|
0.05 | 0.0085 | 0.0062 | 0.000107 | 0.000046 | 0.0025 | 0.0123 | 0.0000053 | 0.0036 |
13 |
|
* | 4.37 · 108 | 1.43 · 1010 | 3.6 · 109 | 1.55 · 1013 | 4.98 · 1013 | 2.20 · 1014 | 1.0 · 1015 | 4.0 · 1015 |
14 |
|
* | 0.062 | 0.4 | 0.02 | 65 | 741.5 | 1085.65 | 1017 | 2273.6 |
15 |
|
* | * | * | * | 0.000161 | 0.0059 | 0.04 | 0.163 | 1.46 |
16 |
|
* | * | * | * | 0.0000105 | 0.013 | 0.016 | 0.045 | 0.31 |
17 |
|
1.69 · 1015 | 4.28 · 1014 | 1.71 · 1015 | 3.46 · 1015 | 4.81 · 1015 | 5.11 · 1014 | 2.02 · 1015 | 6.24 · 1015 | 8.2 · 1015 |
18 |
|
3.74 · 10−4 | 1.81 · 10−3 | 2.295 · 10−3 | 3.0 · 10−3 | 3.68 · 10−3 | 1.91 · 10−4 | 4.01 · 10−4 | 9.41 · 10−4 | 1.14 · 10−3 |
19 |
|
2.79 · 10−4 | 1.95 · 10−3 | 2.45 · 10−3 | 2.96 · 10−3 | 3.71 · 10−3 | 2.03 · 10−4 | 4.28 · 10−4 | 9.41 · 10−4 | 1.20 · 10−3 |
20 |
|
1.77 · 10−5 | 1.55 · 10−5 | 1.43 · 10−5 | 2.2 · 10−7 | 1.7 · 10−7 | 4.85 · 10−7 | 5.1 · 10−7 | 5.2 · 10−9 | 4.08 · 10−7 |
21 |
|
* | * | * | * | 3.86 · 10−8 | 2.51 · 10−6 | 6.8 · 10−7 | 4.24 · 10−5 | 3.5 · 10−4 |
22 |
|
2.97 · 10−4 | 1.965 · 10−3 | 2.46 · 10−3 | 2.96 · 10−3 | 3.71 · 10−3 | 2.06 · 10−4 | 4.35 · 10−4 | 9.83 · 10−4 | 1.55 · 10−3 |
23 |
|
0.794 | 1.086 | 1.072 | 0.987 | 1.008 | 1.08 | 1.085 | 1.57 | 1.36 |
It may be concluded that with increased doping concentration of the InAs samples (Tables
The actual values of the ratio
Conductance components for InAs 4.7
Conductance components for InAs 4.7
Conductance components for InAs 4.7
Conductance components for InAs 4.7
Figures
The scattering mechanism considered in for InGaAs calculation, the conductance components values, and the results of the calculated parameters are shown for 1.0–7
The actual the values given in line 23 of Tables
The actual values of the ratio
Conductance components for InGaAs 1.0
Conductance components for InGaAs 1.0
Conductance components for InGaAs 1.0
The scattering mechanism used for the GaAs calculations, the conductance components values, and the results of the calculated parameters are shown for 1.7–4.25
The actual values shown in line 23 of Table
The actual values of the ratio
Conductance components for GaAs 1.7
Conductance components for GaAs 1.7
Conductance components for GaAs 1.7
As a followup to our previous papers [
The scattering mechanisms used to calculate the charge transport properties (Tables
The presented method for the numerical modelling and calculation of conductance components allows us to determine what parameters affect the total conductance. We calculated only the charge transport properties of carriers that originate from donors and acceptors using the solution of the neutrality equation. This solution is obtained such that the concentration versus temperature curve satisfactorily lies on the experimental data. The same applies to the resistivity and mobility. These three dependences underline the reliability of our calculations. In conclusion, we assume that our modelling method allows for the determination of the conductivity components strictly connected with experiments in relatively weak magnetic fields.
The author is indebted to Maciej Bugajski, Prof. and Janusz Kaniewski, DSc for their many helpful discussions. Special thanks are given to Tomasz Przesławski, PhD for the fruitful measurement results provided and Kazimierz Reginski, DSc for the samples preparation. The calculations are performed using math.8 at ICM Interdisciplinary Centre for Mathematical and Computational Modeling at University of Warsaw owing Calculation Grant G51-5.